Síntesis y Caracterización de Películas Delgadas de Cu2ZnSnSe4
DOI:
https://doi.org/10.29105/qh11.01-276Palabras clave:
Película Delgada, depósito químico, brecha de energía, CZTSeResumen
Mediante el depósito secuencial de películas delgadas de SnSe (110 nm)-ZnSe (90 nm)-Cu2-xSe (55 nm) depositadas químicamente y con un post-tratamiento térmico en presencia de polvo de Selenio a 400 °C y 10 Torr se forma una película delgada de Cu2ZnSnSe4 de 205 nm de espesor. A partir de la medición de difracción de rayos X se comprueba la formación de la película delgada de Cu2ZnSnsSe4 sin la identificación de fases secundarias. El material tiene una brecha de energía de 0.84 eV, una conductividad eléctrica de 0.2 Ω^-1 cm^-1, con movlidad de huecos de 60 cm^2 V^-1 s^-1y concentración de portadores de huecos de 2 x10^16 cm^-3.
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