Semiconducting Thin Films of CuSbS2
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https://doi.org/10.29105/qh2.1-87Palabras clave:
CuSbS2, Thin FilmsResumen
In this paper we present a method to produce polycrystalline CuSbS2 thin ?lms through a solid-state reaction at 350 ºC and 400 ºC involving thin ?lm multilayer of Sb2S3 -CuS or Cu2-xSe by chemical bath deposition technique. The formation of the ternary compound was confirmed by X-ray di?raction (XRD). A direct optical band gap of approx. 1.57 eV anda p-type electrical conductivity of 10-3 (Ω•cm)-1 were measured. These optoelectronic characteristics show perspective for the use of CuSbS, as a suitable absorber material in photovoltaic applications.
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Derechos de autor 2011 Sarah Messina, Paz Hernández , Yolanda Peña
Esta obra está bajo una licencia internacional Creative Commons Atribución 4.0.
