Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited
DOI:
https://doi.org/10.29105/qh11.04-312Palabras clave:
Thin film, Cu3BiS3, Chemical Bath Deposition, PhotovoltaicsResumen
Cu3BiS3 thin films with values of thickness 170 nm were obtained; these films were characterized using X-ray diffraction,
Electron Microscopy Scanning, UV-Vis spectrophotometry, and photoconductivity. We obtained values of bang gap
energy 1.65 eV and electrical conductivity approximately 2.58 ( Ω-cm)-1. A second layer of Cu3BiS3 was deposited over
the first one, thickness increased to 450 nm and band gap energy was 1 eV and electrical conductivity approximately 1
( Ω-cm)-1.
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