Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited
DOI:
https://doi.org/10.29105/qh11.04-312Keywords:
Thin film, Cu3BiS3, Chemical Bath Deposition, PhotovoltaicsAbstract
Cu3BiS3 thin films with values of thickness 170 nm were obtained; these films were characterized using X-ray diffraction,
Electron Microscopy Scanning, UV-Vis spectrophotometry, and photoconductivity. We obtained values of bang gap
energy 1.65 eV and electrical conductivity approximately 2.58 ( Ω-cm)-1. A second layer of Cu3BiS3 was deposited over
the first one, thickness increased to 450 nm and band gap energy was 1 eV and electrical conductivity approximately 1
( Ω-cm)-1.
Downloads
References
-[1] D. Colombara, L.M. Peter, K. Hutchings, K.D. Rogers, S. Schafer, J.T.R. Dufton, M.S. Islam, Thin Solid Films 520 (2012) 5165— 5171. DOI: https://doi.org/10.1016/j.tsf.2012.04.003
-[2] P.K. Nair, L. Huang, M.T.S. Nair, H. Hu, E.A. Meyers, R.A. Zingaro, J. Mater. Res. 12 (1997) 651. DOI: https://doi.org/10.1557/JMR.1997.0099
-[3] V. Kocman, E.W. Nuffield, Acta Crystallogr. B29 (1973) 2528. DOI: https://doi.org/10.1107/S0567740873006953
-[4] Arshad Hussaina Jing Ting Luoa Ping Fana Guangxing Lianga Zhenghua Sua R. Ahmedbc Nisar Alib Qiuping Weie Shabbir Muhammadf Aijaz Rasool Chaudhryg Yong Qing Fu, Applied Surface Science, 505, 2020, 144597. DOI: https://doi.org/10.1016/j.apsusc.2019.144597
-[5] F.Mesa, A.Dussan, G.Gordillo, s. Phys. StatusSolidi C7, 3-4, (2010) 917— 920 DOI: https://doi.org/10.1002/pssc.200982860
-[6] V. Estrella, M.T.S. Nair and P.K. Nair, Sci. Technol. 18 (2003) 190-194 DOI: https://doi.org/10.1088/0268-1242/18/2/322
-[7] S. H. Pawar, A.J. Pawar, P.N. Bhosale, Bulletin of Material Science 8, 3, (1986) 423- 426. DOI: https://doi.org/10.1007/BF02744156
-[8] S. ten Haaf, H. Strater, R. Briiggemann, G. H. Bauer, C. Felser, G. Jakob Thin Solid Films,535, (2013), 394-397. DOI: https://doi.org/10.1016/j.tsf.2012.11.089
-[9] G. Hodes, M. Dekker, Inc. Chemical solution deposition of semiconductor films (2003). DOI: https://doi.org/10.1201/9780203909096
-[10] M.T.S. Nair, L. Guerrero, P.K. Nair, Semicond. Sci. Technol. 13 (1998) 1164-1169. DOI: https://doi.org/10.1088/0268-1242/13/10/019
-[11] G. Golan, A. Axelevitch, B. Gorenstein, V. Manevych, Microelectronics Journal 37 (2006) 910-915. DOI: https://doi.org/10.1016/j.mejo.2006.01.014
