Preparación de películas delgadas de AS2S3 por depósito químico con perspectivas de aplicacíon en celdas solares
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https://doi.org/10.29105/qh1.1-52Palabras clave:
depósito quimico, celdas solares, películas delgadasResumen
In this paper we obtained thin films of As2S3 by chemical bath deposition. The films were prepared at a temperature of 80 ºC for 3 hours each deposit. They were thermally treated at 180 ºC and 250 ºC for 30 minutes for 1 hour, respectively. The energy gap was calculated 2.9 eV. The conductivity was around, 3.62X10-1 (O*cmr'.
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Derechos de autor 2010 Y. Peña, A. Benitez, S. Lugo, P. Elizondo, T. Garza
Esta obra está bajo una licencia internacional Creative Commons Atribución 4.0.
